Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder

The relationship between the spatial position of the diamond seed and growth mode is investigated with an enclosed-type holder for single-crystal diamond growth using the microwave plasma chemical vapor deposition epitaxial method. The results demonstrate that there are three main regions by varying the spatial position of the seed. Due to the plasma concentration occurring at the seed edge, a larger depth is beneficial to transfer the plasma to the holder surface and suppress the polycrystalline diamond rim around the seed edge. However, the plasma density at the edge decreases drastically when the depth is too large, resulting in the growth of a vicinal grain plane and the reduction of surface area. By adopting an appropriate spatial location, the size of single-crystal diamond can be increased from 7 mm × 7 mm × 0.35 mm to 8.6 mm × 8.6 mm × 2.8 mm without the polycrystalline diamond rim.     

Quantum algorithm for neighborhood preserving embedding

Neighborhood preserving embedding (NPE) is an important linear dimensionality reduction technique that aims at preserving the local manifold structure. NPE contains three steps, i.e., finding the nearest neighbors of each data point, constructing the weight matrix, and obtaining the transformation matrix. Liang et al. proposed a variational quantum algorithm (VQA) for NPE [Phys. Rev. A 101 032323 (2020)]. The algorithm consists of three quantum sub-algorithms, corresponding to the three steps of NPE, and was expected to have an exponential speedup on the dimensionality n. However, the algorithm has two disadvantages: (i) It is not known how to efficiently obtain the input of the third sub-algorithm from the output of the second one. (ii) Its complexity cannot be rigorously analyzed because the third sub-algorithm in it is a VQA. In this paper, we propose a complete quantum algorithm for NPE, in which we redesign the three sub-algorithms and give a rigorous complexity analysis. It is shown that our algorithm can achieve a polynomial speedup on the number of data points m and an exponential speedup on the dimensionality n under certain conditions over the classical NPE algorithm, and achieve a significant speedup compared to Liang et al.'s algorithm even without considering the complexity of the VQA.     

Simulating the dynamic behavior of planetary gearbox based on improved Hanning function

Planetary gearboxes are widely used in industrial machines. They usually work in harsh environments giving rise to damages and high maintenance costs. Condition monitoring is a key action allowing one to detect the presence of such damage ensuring healthy running conditions. The knowledge of the dynamic behavior of such a gearbox can be achieved using modeling tools as a primary step before conditioning the monitoring subject. In addition, modeling a gear set can help in the stage of design in order to optimize physical and geometric parameters of the system. Therefore, in this work, a two-dimensional lumped parameter model is adopted to build all vibration sources. The time-varying mesh stiffness is approximated as a square wave form. A novel mathematical formulation is proposed to model the amplitude modulation phenomenon due to the rotational motion of the planets around the center of the gearbox. Finally, the overall vibration signal is concluded as a summation of all vibration components influenced by the modulation function.     

TBOR-shaped electro-optic modulator with dual output based on double-layer graphene

We proposed an electro-optic modulator with two-bus one-ring (TBOR) structure to improve the extinction ratio and reduce insert loss. It has a dual output compared with one-bus one-ring structure. In addition, double-layer graphene makes it possible for the modulation in the visible to mid-infrared wavelength range. It shows that this new electro-optic modulator can present two switching states well with low insertion loss, high absorption and high extinction ratio. At $\lambda =1550\text{ nm}$, when the switching states are based on the chemical potential, ${\mu }_{\mathrm{c}}=0.38\text{ eV}$ and ${\mu }_{\mathrm{c}}=0.4\text{ eV}$, the insertion losses of both output ports are less than 2 dB, the absorption of the output port coupled via a micro-ring reaches 45 dB and the extinction ratio reaches 14 dB. When the refractive index of the dielectric material is 4.2, the applied voltage will be less than 1.2 V, thus can be used in low-voltage CMOS technology.     

Nonlinear dynamical magnetosonic wave interactions and collisions in magnetized plasma

The one-dimensional nonlinear dynamical wave interactions in a system of quasineutral two-fluid plasma in a constant magnetic field are investigated.The existence of the travelling wave solutions is discussed.The modulation stability of linear waves and the modulation instability of weakly nonlinear waves are presented.Both suggest that the Korteweg-de Vries(KdV) system is modulationally stable.Besides,the wave interactions including the periodic wave interaction and the solitary wave interaction are captured and presented.It is shown that these interacting waves alternately exchange their energy during propagation.The Fourier spectrum analysis is used to depict the energy transformation between the primary and harmonic waves.It is known that the wave interactions in magnetized plasma play an important role in various processes of heating and energy transportation in space and astrophysical plasma.However,few researchers have considered such magnetohydrodynamic(MHD) wave interactions in plasma.It is expected that this work can provide additional insight into understanding of behaviors of MHD wave interactions.     

AlGaN/GaN高电子迁移率器件外部边缘电容的物理模型

AlGaN/GaN HEMT外部边缘电容Cofd是由栅极垂直侧壁与二维电子气水平壁之间的电场构成的等效电容.本文基于保角映射法对Cofd进行物理建模,考虑沟道长度调制效应,研究外部偏置、阈值电压漂移和温度变化对Cofd的影响:随着漏源偏压从零开始增加,Cofd先保持不变再开始衰减,其衰减速率随栅源偏压的增加而减缓;AlGaN势垒层中施主杂质浓度的减小和Al组分的减小都可引起阈值电压的正向漂移,正向阈值漂移会加强沟道长度调制效应对Cofd的影响,导致Cofd呈线性衰减.在大漏极偏压工作情况下,Cofd对器件工作温度的变化更加敏感.     

Dispersive shock waves in three dimensional Benjamin–Ono equation

Dispersive shock waves (DSWs) in the three dimensional Benjamin–Ono (3DBO) equation are studied with step-like initial condition along a paraboloid front. By using a similarity reduction, the problem of studying DSWs in three space one time (3+1) dimensions reduces to finding DSW solution of a (1+1) dimensional equation. By using a special ansatz, the 3DBO equation exactly reduces to the spherical Benjamin–Ono (sBO) equation. Whitham modulation equations are derived which describes DSW evolution in the sBO equation by using a perturbation method. These equations are written in terms of appropriate Riemann type variables to obtain the sBO-Whitham system. DSW solution which is obtained from the numerical solutions of the Whitham system and the direct numerical solution of the sBO equation are compared. In this comparison, a good agreement is found between these solutions. Also, some physical qualitative results about DSWs in sBO equation are presented. It is concluded that DSW solutions in the reduced sBO equation provide some information about DSW behavior along the paraboloid fronts in the 3DBO equation.     

Tuning the electronic properties of hydrogen passivated C3N nanoribbons through van der Waals stacking

The two-dimensional (2D) C₃N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C₃N via stacking or forming nanoribbon, bandgap modulation of bilayer C₃N nanoribbons (C₃NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C₃N by cutting it into hydrogen passivated C₃NNRs and stacking them into bilayer heterostructures. It was found that armchair (AC) C₃NNRs with three types of edge structures are all semiconductors, while only zigzag (ZZ) C₃NNRs with edges composed of both C and N atoms (ZZCN/ CN) are semiconductors. The bandgaps of all semiconducting C₃NNRs are larger than that of C₃N nanosheet. More interestingly, AC-C₃NNRs with CN/CN edges (AC-CN/CN) possess direct bandgap while ZZ-CN/CN have indirect bandgap. Compared with the monolayer C₃NNR, the bandgaps of bilayer C₃NNRs can be greatly modulated via different stacking orders and edge structures, varying from 0.43 eV for ZZ-CN/CN with AB′-stacking to 0.04 eV for AC-CN/CN with AA-stacking. Particularly, transition from direct to indirect bandgap was observed in the bilayer AC-CN/CN heterostructure with AA′-stacking, and the indirect-to-direct transition was found in the bilayer ZZ-CN/CN with ABstacking. This work provides insights into the effective bandgap engineering of C₃N and offers a new opportunity for its applications in nano-electronics and optoelectronic devices.